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NIF62514
MOSFET MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
Rating
Drain ? to ? Source Voltage Internally Clamped
Drain ? to ? Gate Voltage Internally Clamped (R GS = 1.0 M W )
Gate ? to ? Source Voltage
Symbol
V DSS
V DGR
V GS
Value
40
40
" 16
Unit
Vdc
Vdc
Vdc
Drain Current
? Continuous @ T A = 25 ° C
? Continuous @ T A = 100 ° C
? Pulsed (t p ≤ 10 m s)
I D
I D
I DM
Internally Limited
Total Power Dissipation
@ T A = 25 ° C (Note 1)
@ T A = 25 ° C (Note 2)
@ T A = 25 ° C (Note 3)
Thermal Resistance,
Junction ? to ? Tab
Junction ? to ? Ambient (Note 1)
Junction ? to ? Ambient (Note 2)
Single Pulse Drain ? to ? Source Avalanche Energy
(V DD = 25 Vdc, V GS = 5.0 Vdc, V DS = 40 Vdc, I L = 2.8 Apk, L = 80 mH, R G = 25 W )
Operating and Storage Temperature Range
P D
R q JT
R q JA
R q JA
E AS
T J , T stg
1.1
1.73
8.93
14
114
72.3
300
? 55 to 150
W
° C/W
mJ
° C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Mounted onto min pad board.
2. Mounted onto 1 ″ pad board.
3. Mounted onto large heatsink.
+
I D
DRAIN
I G
+
VGS
?
GATE
SOURCE
VDS
?
Figure 1. Voltage and Current Convention
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